Defect temperature kinetics during Catastrophic Optical Damage in high power diode lasers

Martin Hempel; Jens W. Tomm

doi:10.1117/12.2035488

27 February 2014 Defect temperature kinetics during catastrophic optical damage in high power diode lasers

Martin Hempel, Jens W. Tomm

Author Affiliations +

Proceedings Volume 9002, Novel In-Plane Semiconductor Lasers XIII; 90021H (2014) https://doi.org/10.1117/12.2035488
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

Catastrophic optical damage (COD) is one of the limiting factors preventing diode lasers from reaching even higher optical output powers. We apply different techniques to AlGaAs/GaAs based quantum well diode lasers emitting at 808 nm in order to investigate the temperature kinetics during COD. The latter was subject to controversial discussions in the past. We experimentally verify the presence of temperatures as high as ≈1600°C at the defect front during the entire defect growth process. Locations passed by this front are affected by a rapid heating-cooling-cycle. Our results allow a deeper understanding of the mechanisms related to COD on the microscopic and macroscopic scale.

Citation Download Citation

Martin Hempel and Jens W. Tomm "Defect temperature kinetics during catastrophic optical damage in high power diode lasers", Proc. SPIE 9002, Novel In-Plane Semiconductor Lasers XIII, 90021H (27 February 2014); https://doi.org/10.1117/12.2035488

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