Development of an EUVL collector with infrared radiation suppression

Michael Kriese; Yuriy Platonov; Bodo Ehlers; Licai Jiang; Jim Rodriguez; Ulrich Mueller; Jay Daniel; Shayna Khatri; Adam Magruder; Steven Grantham; Charles Tarrio; Thomas Lucatorto

doi:10.1117/12.2049279

18 March 2014 Development of an EUVL collector with infrared radiation suppression

Michael Kriese, Yuriy Platonov, Bodo Ehlers, Licai Jiang, Jim Rodriguez, Ulrich Mueller, Jay Daniel, Shayna Khatri, Adam Magruder, Steven Grantham, Charles Tarrio, Thomas Lucatorto

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Proceedings Volume 9048, Extreme Ultraviolet (EUV) Lithography V; 90483C (2014) https://doi.org/10.1117/12.2049279
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

Laser-produced plasma (LPP) sources for extreme ultraviolet lithography (EUVL) systems utilize CO₂ lasers operating with wavelength 10.6μm. Since multilayer-coated optics have high reflectivity for this infrared radiation (IR), a significant and detrimental amount of IR is passed through the EUVL system. One method to remove the IR from the system is to utilize a binary diffraction grating. When this grating is applied directly to the surface of the primary collector optic of the source, the majority of the IR is diverted outside the radius of the exit aperture at the intermediate focus (IF). This paper will report details on the performance of a full size (410mm diameter) Demonstration Collector utilizing IR rejection (IRR) technology with the capability to produce over 125X suppression of IR, equaling the performance of a IR spectral filter. Additional details will be reported on the technology development and use of a glassy smoothing layer to enable high EUV performance, a weighted average multilayer reflectance of 50.9% for unpolarized EUV radiation.

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Michael Kriese, Yuriy Platonov, Bodo Ehlers, Licai Jiang, Jim Rodriguez, Ulrich Mueller, Jay Daniel, Shayna Khatri, Adam Magruder, Steven Grantham, Charles Tarrio, and Thomas Lucatorto "Development of an EUVL collector with infrared radiation suppression", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90483C (18 March 2014); https://doi.org/10.1117/12.2049279

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