Characterization of 1D layout technology at advanced nodes and low k1

V. Axelrad; K. Mikami; M. Smayling; K. Tsujita; H. Yaegashi

doi:10.1117/12.2046120

31 March 2014 Characterization of 1D layout technology at advanced nodes and low k1

V. Axelrad, K. Mikami, M. Smayling, K. Tsujita, H. Yaegashi

Proceedings Volume 9052, Optical Microlithography XXVII; 905213 (2014) https://doi.org/10.1117/12.2046120
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

Highly regular gridded designs have been generally accepted¹ as a key component for continued advances in lithographic resolution in an era of limited further progress in lithography hardware. With a given process technology tool set, higher pattern density (lower k1) and quality are achieved using gridded design rules (GDR) in comparison to conventional 2D designs. GDR is necessary for designs with k1 approaching the theoretical Rayleigh limit ~ 0:25. High pattern densities (fine pitch) and good image quality and manufacturability are achieved by very regular designs Fig. 1, which avoid complex corner structures and pattern density variations typical for conventional 2D designs. In particular lines+cuts implementations of GDR are well-suited for pitch splitting and multiple patterning, where the critical cuts patterns can be easily separated into groups with larger pitch for separate patterning. Very advanced technology nodes thus become possible with conventional lithography technology, see² for 11nm results.

Citation Download Citation

V. Axelrad, K. Mikami, M. Smayling, K. Tsujita, and H. Yaegashi "Characterization of 1D layout technology at advanced nodes and low k1", Proc. SPIE 9052, Optical Microlithography XXVII, 905213 (31 March 2014); https://doi.org/10.1117/12.2046120

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