Paper
31 March 2014 Understanding the critical challenges of self-aligned octuple patterning
Ji Yu, Wei Xiao, Weiling Kang, Yijian Chen
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Abstract
In this paper, we present a thorough investigation of self-aligned octuple patterning (SAOP) process characteristics, cost structure, integration challenges, and layout decomposition. The statistical characteristics of SAOP CD variations such as multi-modality are analyzed and contributions from various features to CDU and MTT (mean-to-target) budgets are estimated. The gap space is found to have the worst CDU+MTT performance and is used to determine the required overlay accuracy to ensure a satisfactory edge-placement yield of a cut process. Moreover, we propose a 5-mask positive-tone SAOP (pSAOP) process for memory FEOL patterning and a 3-mask negative-tone SAOP (nSAOP) process for logic BEOL patterning. The potential challenges of 2-D SAOP layout decomposition for BEOL applications are identified. Possible decomposition approaches are explored and the functionality of several developed algorithm is verified using 2-D layout examples from Open Cell Library.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ji Yu, Wei Xiao, Weiling Kang, and Yijian Chen "Understanding the critical challenges of self-aligned octuple patterning", Proc. SPIE 9052, Optical Microlithography XXVII, 90521P (31 March 2014); https://doi.org/10.1117/12.2046094
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CITATIONS
Cited by 5 scholarly publications and 3 patents.
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KEYWORDS
Optical lithography

Etching

Algorithm development

Magnesium

Photomasks

Critical dimension metrology

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