Ion-selective electrolyte-gated field-effect transistors: prerequisites for proper functioning

Johannes Kofler; Kerstin Schmoltner; Emil J. W. List-Kratochvil

doi:10.1117/12.2063121

7 October 2014 Ion-selective electrolyte-gated field-effect transistors: prerequisites for proper functioning

Johannes Kofler, Kerstin Schmoltner, Emil J. W. List-Kratochvil

Proceedings Volume 9185, Organic Field-Effect Transistors XIII; and Organic Semiconductors in Sensors and Bioelectronics VII; 91851U (2014) https://doi.org/10.1117/12.2063121
Event: SPIE Organic Photonics + Electronics, 2014, San Diego, California, United States

Abstract

Electrolyte-gated organic field-effect transistors (EGOFETs) used as transducers and amplifiers in potentiometric sensors have recently attracted a significant amount of scientific interest. For that reason, the fundamental prerequisites to achieve a proper potentiometric signal amplification and transduction are examined. First, polarizable as well as non-polarizable semiconductor- and gate-electrolyte- interface combinations are investigated by normal pulse voltammetry. The results of these measurements are correlated with the corresponding transistor characteristics, clarifying the functional principle of EGOFETs and the requirements for high signal amplification. In addition to a good electrical performance, the EGOFET-transducers should also be compatible with the targeted sensing application. Accordingly, the influence of different gate materials and electrolytes on the sensing abilities, are discussed. Even though all physical requirements are met, EGOFETs typically exhibit irreversible degradation, if the gate potential exceeds a certain level. For that reason, EGOFETs have to be operated using a constant source-drain operation mode which is presented by means of an H⁺ (pH) sensitive ion-sensor.

Citation Download Citation

Johannes Kofler, Kerstin Schmoltner, and Emil J. W. List-Kratochvil "Ion-selective electrolyte-gated field-effect transistors: prerequisites for proper functioning", Proc. SPIE 9185, Organic Field-Effect Transistors XIII; and Organic Semiconductors in Sensors and Bioelectronics VII, 91851U (7 October 2014); https://doi.org/10.1117/12.2063121

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