Paper
16 March 2015 Coupled simulation of carrier transport and electrodynamics: the EMC/FDTD/MD technique
K. J. Willis, N. Sule, S. C Hagness, I. Knezevic
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Abstract
In order to understand the response of conductive materials to high-frequency electrical or optical excitations, the interplay between carrier transport and electrodynamics must be captured. We present our recent work on developing EMC/FDTD/MD, a self-consistent coupled simulation of semiclassical carrier transport, described by ensemble Monte Carlo (EMC), with full-wave electrodynamics, described by the finite-difference time-domain (FDTD) technique and molecular dynamics (MD) for sub-grid-cell interactions. Examples of room-temperature terahertz-frequency transport simulation of doped silicon and back-gated graphene are shown.
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K. J. Willis, N. Sule, S. C Hagness, and I. Knezevic "Coupled simulation of carrier transport and electrodynamics: the EMC/FDTD/MD technique", Proc. SPIE 9357, Physics and Simulation of Optoelectronic Devices XXIII, 935706 (16 March 2015); https://doi.org/10.1117/12.2083396
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KEYWORDS
Finite-difference time-domain method

Graphene

Monte Carlo methods

Scattering

Particles

Silicon

Terahertz radiation

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