Numerical modeling of radiation effects in Si solar cell for space

Alexandre Fedoseyev; Ashok Raman; David Thomas; Stuart Bowden; Jea Young Choi; Christiana Honsberg; Tanmay Monga

doi:10.1117/12.2081064

16 March 2015 Numerical modeling of radiation effects in Si solar cell for space

Alexandre Fedoseyev, Ashok Raman, David Thomas, Stuart Bowden, Jea Young Choi, Christiana Honsberg, Tanmay Monga

Proceedings Volume 9358, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV; 93580N (2015) https://doi.org/10.1117/12.2081064
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

Improvements to solar cell efficiency and radiation hardness that are compatible with low cost, high volume manufacturing processes are critical for power generation applications in future long-term NASA and DOD space missions. In this paper, we provide the results of numerical simulation of the radiation effects in a novel, ultra-thin (UT), Si photovoltaic cell technology that combines enhanced light trapping (LT) and absorption due to nanostructured surfaces, separation of photogenerated carriers by carrier selective contacts (CSC), and increased carrier density due to multiple exciton generation (MEG). Such solar cells have a potential to achieve high conversion efficiencies while shown to be rad-hard, lightweight, flexible, and low–cost, due to the use of Si high volume techniques.

Citation Download Citation

Alexandre Fedoseyev, Ashok Raman, David Thomas, Stuart Bowden, Jea Young Choi, Christiana Honsberg, and Tanmay Monga "Numerical modeling of radiation effects in Si solar cell for space", Proc. SPIE 9358, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV, 93580N (16 March 2015); https://doi.org/10.1117/12.2081064

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