Status and future of GaN-based vertical-cavity surface-emitting lasers

Daniel F. Feezell

doi:10.1117/12.2079503

13 March 2015 Status and future of GaN-based vertical-cavity surface-emitting lasers

Daniel F. Feezell

Proceedings Volume 9363, Gallium Nitride Materials and Devices X; 93631G (2015) https://doi.org/10.1117/12.2079503
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

Vertical-cavity surface-emitting lasers (VCSELs) offer distinct advantages over conventional edge-emitting lasers, including lower power consumption, single-longitudinal-mode operation, circularly symmetric output beams, waferlevel testing, and the ability to form densely packed, two-dimensional arrays. High-performance GaN-based VCSELs are well suited for applications in high-density optical data storage, high-resolution printing, lighting, displays, projectors, miniature atomic clocks, and chemical/biological sensing. Thus far, the performance of these devices has been limited by challenges associated with the formation of high-reflectance distributed Bragg reflectors (DBRs), optical mode confinement, carrier transport, lateral current spreading, polarization-related electric fields, and cavity-length control. This manuscript discusses the state-of-the-art results for electrically injected GaN-based VCSELs and reviews approaches to overcome the key challenges currently preventing higher performance devices. The manuscript also describes the development of nonpolar GaN-based VCSELs on free-standing GaN. Nonpolar orientations exhibit anisotropic optical gain within the quantum well plane and uniquely enable VCSELs with a well-defined and stable polarization state. In addition, a detailed description of a band-gap-selective photoelectrochemical etching (BGS PECE) process for substrate removal and fine cavity length control on free-standing GaN substrates is provided.

Citation Download Citation

Daniel F. Feezell "Status and future of GaN-based vertical-cavity surface-emitting lasers", Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93631G (13 March 2015); https://doi.org/10.1117/12.2079503

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available