Paper
19 February 2015 The chemisorption of different elements on the Si (001) surface
Author Affiliations +
Proceedings Volume 9449, The International Conference on Photonics and Optical Engineering (icPOE 2014); 94493Q (2015) https://doi.org/10.1117/12.2082858
Event: The International Conference on Photonics and Optical Engineering and the Annual West China Photonics Conference (icPOE 2014), 2014, Xi'an, China
Abstract
The four kinds of atoms, such as carbon (C), oxygen (O), copper (Cu) and sodium (Na), are adsorbed on the Si (001) surface, the curves of the band structure and density of states with different elements were plotted. From the curves, the pseudogap, forbidden bandwidth, energy curve of the ups and downs, the trend of Fermi level in the graphics and density of states at the Fermi level were analyzed and compared for different elements absorption. Through comparative analysis, the conclusions were come to. Research Conclusions: the property of absorption element decides the localization properties of electronic, the pseudogap, forbidden bandwidth, Energy curve of the ups and downs, the trend of Fermi level in the graphics, density of states at the Fermi level and etc.
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Junfang Wu "The chemisorption of different elements on the Si (001) surface", Proc. SPIE 9449, The International Conference on Photonics and Optical Engineering (icPOE 2014), 94493Q (19 February 2015); https://doi.org/10.1117/12.2082858
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KEYWORDS
Silicon

Adsorption

Copper

Sodium

Chemical elements

Chemical species

Silicon carbide

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