Plasmon Amplification In Semiconductor Superlattices

K. Kempa; P. Bakshi; J. Cen

doi:10.1117/12.947392

16 August 1988 Plasmon Amplification In Semiconductor Superlattices

K. Kempa, P. Bakshi, J. Cen

Proceedings Volume 0945, Advanced Processing of Semiconductor Devices II; (1988) https://doi.org/10.1117/12.947392
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

We have studied surface plasma modes in type I and type II semiconductor superlattices, with and without an in-plane electric field. We demonstrate feasibility of the current driven mode-amplification in both systems, and determine the threshold drift velocities for this effect.

Citation Download Citation

K. Kempa, P. Bakshi, and J. Cen "Plasmon Amplification In Semiconductor Superlattices", Proc. SPIE 0945, Advanced Processing of Semiconductor Devices II, (16 August 1988); https://doi.org/10.1117/12.947392

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available