Paper
9 August 1988 Electron Spin Resonance Spectroscopy Of Defects In Low Temperature Dielectric Films
D. Jousse, J. Kanicki, J. Stathis, Y. Cros
Author Affiliations +
Proceedings Volume 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III; (1988) https://doi.org/10.1117/12.947435
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
The electron spin resonance technique has been used for the identification of defects in silicon-based dielectric thin films deposited by plasma enhanced chemical vapor deposition. Characteristics of the signal due to Si dangling bonds are obtained for oxides, nitrides, and oxynitrides deposited below 500°C. The g-values and linewidths are primarily determined by the composition although defect configurations do not obey random bonding statistics in nitrides and oxynitrides. The defect densities depend essentially on the composition, the growth rate, and the substrate temperature. The good correlation with electrical measurements on MIS structures shows that, in the case of silicon nitride, ESR is a powerful technique for the optimization of deposition conditions for films to be used as low temperature gate insulators.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Jousse, J. Kanicki, J. Stathis, and Y. Cros "Electron Spin Resonance Spectroscopy Of Defects In Low Temperature Dielectric Films", Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); https://doi.org/10.1117/12.947435
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KEYWORDS
Silicon

Plasma enhanced chemical vapor deposition

Dielectrics

Silicon films

Silica

Spectroscopy

Oxides

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