Raman spectroscopy study of SiC thin films prepared by PECVD for solar cell working in hard environment

Vlasta Sasinková; Jozef Huran; Angela Kleinová; Pavol Boháček; Juraj Arbet; Mária Sekáčova

doi:10.1117/12.2186749

23 September 2015 Raman spectroscopy study of SiC thin films prepared by PECVD for solar cell working in hard environment

Vlasta Sasinková, Jozef Huran, Angela Kleinová, Pavol Boháček, Juraj Arbet, Mária Sekáčova

Author Affiliations +

Proceedings Volume 9563, Reliability of Photovoltaic Cells, Modules, Components, and Systems VIII; 95630V (2015) https://doi.org/10.1117/12.2186749
Event: SPIE Optics + Photonics for Sustainable Energy, 2015, San Diego, California, United States

Abstract

Amorphous silicon carbide films were deposited by plasma enhanced chemical vapor deposition (PECVD) technology using SiH₄, CH₄, H₂ and NH₃ gas as precursors. The concentration of elements in the films was determined by RBS and ERD analytical method. Chemical compositions were analyzed by FT-IR spectroscopy. Raman spectroscopy study of the SiC films were performed by using a Raman microscope. Irradiation of samples with neutrons to fluencies A(7.9x10¹⁴ cm^-2), B(5x10¹⁵ cm^-2) and C(3.4x10¹⁶ cm^-2) was performed at room temperature. Raman spectroscopy results of SiC films showed decreasing of Raman band feature intensity after neutron irradiation and slightly decreased with increased neutron fluencies. Raman spectra differences between types of films before and after neutron irradiation are discussed. The electrical properties of SiC films were determined by the I-V measurement at 295 K. The measured currents were greater (about two order) after irradiation than the current before irradiation for all samples and rose up with neutron fluencies.

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Vlasta Sasinková, Jozef Huran, Angela Kleinová, Pavol Boháček, Juraj Arbet, and Mária Sekáčova "Raman spectroscopy study of SiC thin films prepared by PECVD for solar cell working in hard environment", Proc. SPIE 9563, Reliability of Photovoltaic Cells, Modules, Components, and Systems VIII, 95630V (23 September 2015); https://doi.org/10.1117/12.2186749

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