Raman spectrometry of carbon nanotubes using an Al-catalyst supported layer on nickel film deposited on silicon substrate

J. Saengpeng; U. Pakdee; S. Chiangga; W. Rattanasakulthong

doi:10.1117/12.2195870

29 July 2015 Raman spectrometry of carbon nanotubes using an Al-catalyst supported layer on nickel film deposited on silicon substrate

J. Saengpeng, U. Pakdee, S. Chiangga, W. Rattanasakulthong

Author Affiliations +

Proceedings Volume 9659, International Conference on Photonics Solutions 2015; 96591D (2015) https://doi.org/10.1117/12.2195870
Event: International Conference on Photonics Solutions 2015, 2015, Hua Hin, Thailand

Abstract

Carbon nanotubes (CNTs) were grown on Ni catalyst with Al catalyst supported layer prepared on silicon substrate at different temperatures by TCVD. TEM images clearly showed the multi-wall structure of carbon nanotubes (MWCNTs) and SEM images revealed that the average diameters of MWCNTs were 116, 121, 142 and 162 nm for the growing temperatures of 600, 700, 800 and 900°C, respectively. The increase of tube diameter was due to the difference of Ni particle size and distribution after pretreatment. Raman spectrum revealed the two peaks of the D and G band at 1282- 1290 and 1588-1598 cm^-1, respectively. The tubes grown at 800°C showed a shoulder peak of G band at 1598 cm^-1. The minimum of defect induced disorder (ID/IG) of 1.19 was found at 800°C whereas the maximum disorder of 1.70 was observed at 600°C. All results confirm that the tube growth at 800°C shows the minimum imperfective disorder and the tube diameter can be manipulated by the Ni particle size and distribution.

Citation Download Citation

J. Saengpeng, U. Pakdee, S. Chiangga, and W. Rattanasakulthong "Raman spectrometry of carbon nanotubes using an Al-catalyst supported layer on nickel film deposited on silicon substrate", Proc. SPIE 9659, International Conference on Photonics Solutions 2015, 96591D (29 July 2015); https://doi.org/10.1117/12.2195870

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