Paper
4 March 2016 Dynamic properties of silicon-integrated short-wavelength hybrid-cavity VCSEL
Emanuel P. Haglund, Sulakshna Kumari, Petter Westbergh, Johan S. Gustavsson, Gunther Roelkens, Roel Baets, Anders Larsson
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Abstract
We present a vertical-cavity surface-emitting laser (VCSEL) where a GaAs-based “half-VCSEL” is attached to a dielectric distributed Bragg reflector on silicon using ultra-thin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive bonding, creating a hybrid cavity where the optical field extends over both the GaAs- and the Si-based parts of the cavity. A VCSEL with an oxide aperture diameter of 5 μm and a threshold current of 0.4 mA provides 0.6 mW output power at 845 nm. The VCSEL exhibits a modulation bandwidth of 11 GHz and can transmit data up to 20 Gbps.
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Emanuel P. Haglund, Sulakshna Kumari, Petter Westbergh, Johan S. Gustavsson, Gunther Roelkens, Roel Baets, and Anders Larsson "Dynamic properties of silicon-integrated short-wavelength hybrid-cavity VCSEL", Proc. SPIE 9766, Vertical-Cavity Surface-Emitting Lasers XX, 976607 (4 March 2016); https://doi.org/10.1117/12.2207301
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KEYWORDS
Vertical cavity surface emitting lasers

Dielectrics

Modulation

Gallium arsenide

Waveguides

Semiconductor lasers

Adhesives

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