Shallow etch electrical isolation in capacitively loaded Mach-Zehnder modulators

Padraic E. Morrissey; Philip J. Marraccini; Moises A. Jezzini; Frank H. Peters

doi:10.1117/12.2224583

27 April 2016 Shallow etch electrical isolation in capacitively loaded Mach-Zehnder modulators

Padraic E. Morrissey, Philip J. Marraccini, Moises A. Jezzini, Frank H. Peters

Proceedings Volume 9889, Optical Modelling and Design IV; 988903 (2016) https://doi.org/10.1117/12.2224583
Event: SPIE Photonics Europe, 2016, Brussels, Belgium

Abstract

To compensate for velocity mismatch in travelling wave opto-electronic devices, the microwave velocity of the propagating RF signal is reduced by introducing capacitively loaded elements. For high speed operation, these elements must be electrically isolated from one another, which is typically achieved by using ion-implantation to render the p-doped material non-conducting. We propose and demonstrate through optical and electrical simulations that ion-implantation can be avoided by using a quasi-shallow etch to electrically isolate the capacitive elements. High isolation can be achieved using such an etch without introducing additional losses to the propagating optical signal.

Citation Download Citation

Padraic E. Morrissey, Philip J. Marraccini, Moises A. Jezzini, and Frank H. Peters "Shallow etch electrical isolation in capacitively loaded Mach-Zehnder modulators", Proc. SPIE 9889, Optical Modelling and Design IV, 988903 (27 April 2016); https://doi.org/10.1117/12.2224583

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