AlGaInN laser diode bar and array technology for high-power and individual addressable applications

S. P. Najda; P. Perlin; T. Suski; L. Marona; M. Boćkowski; M. Leszczyński; P. Wisniewski; R. Czernecki; R. Kucharski; G. Targowski

doi:10.1117/12.2207863

28 April 2016 AlGaInN laser diode bar and array technology for high-power and individual addressable applications

S. P. Najda, P. Perlin, T. Suski, L. Marona, M. Boćkowski, M. Leszczyński, P. Wisniewski, R. Czernecki, R. Kucharski, G. Targowski

Author Affiliations +

Proceedings Volume 9892, Semiconductor Lasers and Laser Dynamics VII; 98920Z (2016) https://doi.org/10.1117/12.2207863
Event: SPIE Photonics Europe, 2016, Brussels, Belgium

Abstract

The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well, giving rise to new and novel applications for medical, industrial, display and scientific purposes. Ridge waveguide laser diode structures are fabricated to achieve single mode operation with high optical powers of >100mW with high reliability. Low defectivity and highly uniform GaN substrates allow arrays and bars of nitride lasers to be fabricated. We demonstrate the operation of monolithic AlGaInN laser bars with up to 20 emitters giving optical powers up to 4W cw at ~395nm with a common contact configuration. These bars are suitable for optical pumps and novel extended cavity systems. An alternative package configuration for AlGaInN laser arrays allows for each individual laser to be individually addressable allowing complex free-space and/or fibre optic system integration within a very small form-factor.

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S. P. Najda, P. Perlin, T. Suski, L. Marona, M. Boćkowski, M. Leszczyński, P. Wisniewski, R. Czernecki, R. Kucharski, and G. Targowski "AlGaInN laser diode bar and array technology for high-power and individual addressable applications", Proc. SPIE 9892, Semiconductor Lasers and Laser Dynamics VII, 98920Z (28 April 2016); https://doi.org/10.1117/12.2207863

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