Electrorefraction In Semiconductor Quantum Wells

J. E. Zucker

doi:10.1117/12.960121

9 February 1989 Electrorefraction In Semiconductor Quantum Wells

J. E. Zucker

Proceedings Volume 0994, Optoelectronic Materials, Devices, Packaging, and Interconnects II; (1989) https://doi.org/10.1117/12.960121
Event: O-E/Fiber LASE '88, 1988, Boston, MA, United States

Abstract

We have measured electric-field-induced changes in refractive index in GaAs- and InP-based quantum well heterostructures. Excitonic effects provide index changes one to two orders of magnitude larger than in corresponding bulk semiconductors. This enhancement can be applied to low-voltage, compact devices for electro-optic phase modulation.

Citation Download Citation

J. E. Zucker "Electrorefraction In Semiconductor Quantum Wells", Proc. SPIE 0994, Optoelectronic Materials, Devices, Packaging, and Interconnects II, (9 February 1989); https://doi.org/10.1117/12.960121

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