Presentation
7 November 2016 Crosslinkable high k polymer dielectrics for low voltage organic field-effect transistor memories (Conference Presentation)
Hung-Chin Wu, Chih-Chien Hung, Yu-Cheng Chiu, Shih-Huang Tung, Wen-Chang Chen
Author Affiliations +
Abstract
High Performance organic field-effect transistor (OFET) memory devices were successfully prepared using new dielectric materials, poly(N-(hydroxymethyl)acrylamide-co-5 -(9-(5-(diethylamino)pentyl)-2-(4-vinylphenyl)-9H-fluorene (P(NMA-co-F6NSt)), which contained chemical cross-linkable segment (NMA) and hole trapping building block (F6NSt). The high k characteristics of P(NMA-co-F6NSt)) led to a low voltage operation, a small power consumption, and a good digital information storage capacity. Such P(NMA-co-F6NSt) dielectrics in OFET memories with variant NMA/F6NSt molar ratios (100/0 (P1), 95/5 (P2), 80/20 (P3), and 67/33 (P4)) showed excellent insulating properties and good charge storage performance under a low operating voltage below ±5V, due to the tightly network structures after crosslinking and well-dispersed trapping cites (i.e. fluorene moieties). P3-based memory device, in particular, exhibited largest memory window of 4.13 V among the studied polymers, and possessed stable data retention stability over 104 s with a high on/off current ratio (i.e. 104) and good endurance characteristics of more than 200 write-read-write-erase (WRER) cycles. The above results suggested that a high-performance OFET memory device could be facilely achieved using the novel synthesized high-k copolymers.
Conference Presentation
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hung-Chin Wu, Chih-Chien Hung, Yu-Cheng Chiu, Shih-Huang Tung, and Wen-Chang Chen "Crosslinkable high k polymer dielectrics for low voltage organic field-effect transistor memories (Conference Presentation)", Proc. SPIE 9945, Printed Memory and Circuits II, 994509 (7 November 2016); https://doi.org/10.1117/12.2236458
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KEYWORDS
Dielectrics

Field effect transistors

Polymers

Transistors

Data storage

Current controlled current source

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