Self-driven highly responsive PN junction InSe heterostructure near-infrared light detector

Chaobo Dong; Chandraman Patil; Hamed Dalir; Volker J. Sorger

doi:10.1117/12.2613814

5 March 2022 Self-driven highly responsive PN junction InSe heterostructure near-infrared light detector

Chaobo Dong, Chandraman Patil, Hamed Dalir, Volker J. Sorger

Proceedings Volume PC12003, 2D Photonic Materials and Devices V; PC1200309 (2022) https://doi.org/10.1117/12.2613814
Event: SPIE OPTO, 2022, San Francisco, California, United States

Abstract

Here, we demonstrate a 2D p–n van der Waals heterojunction photodetector constructed by vertically stacking p-type and n-type few-layer indium selenide (InSe) 2D flakes. This heterojunction charge-separation-based photodetector shows a three-fold enhancement in responsivity at near-infrared spectral region (980 nm) as compared to a photoconductor detector based on p- or n-only doped regions, respectively. We show, that this junction device exhibits self-powered photodetection operation and hence enables few pA-low dark currents, which is about 3-4 orders of magnitude more efficient than state-of-the-art foundry-based devices. Such capability opens doors for small signal-to-noise environments and low photon-count detectability without having to rely on external gain. We further demonstrate millisecond response rates in this sensitive zero-bias voltage regime.

Conference Presentation

Citation Download Citation

Chaobo Dong, Chandraman Patil, Hamed Dalir, and Volker J. Sorger "Self-driven highly responsive PN junction InSe heterostructure near-infrared light detector", Proc. SPIE PC12003, 2D Photonic Materials and Devices V, PC1200309 (5 March 2022); https://doi.org/10.1117/12.2613814

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