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Optimizing the trade-off between high-speed and energy consumption in today's optoelectronic devices is becoming more complex. Achieving high-speed photonics with heterogeneous material integration requires millimeter-to-centimeter-scale footprints. Search for an electro-optic modulator with high speed, energy economy, and compactness continues. These results were achieved using a 2D material optical modulator integrated on a Silicon photonics platform. A vertical distributed-Bragg-reflector cavity boosts the electro-optic response while reducing the driving voltage by nearly 40 times while retaining modulation depth (5.2 dB/V). Low-power modulators provide high photonic chip density and performance (60 GHz), which is crucial for signal processing and analog and neuromorphic photonic computers. Next, I will share the implementation of the concept of the electrical Scale Length Theory asserts that for high-performance devices with a nominal factor, such as FETs, both the channel thickness and length scale with the nominal factor. When this concept is applied to photodetectors, the gain-bandwidth product (GBP), where is the distance between the electrodes and the route for collecting photo-generated carriers, is equal to the slot width. Here, we experimentally show that a waveguide-integrated, plasmonic MoTe2-based photodetector can efficiently detect light (0.8 A W-1) at 1310 nm at high speed (>30GHz) with 1 V bias voltage. Compact, efficient, and performance photodetectors and modulators are key for next-generation systems with applications in machine intelligence, network edge-processing, data-centers or cyber-security.
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