Nanoscale strain control of spin defects in hBN (Conference Presentation)

Benjamin J. Lawrie

doi:10.1117/12.2636895

4 October 2022 Nanoscale strain control of spin defects in hBN (Conference Presentation)

Benjamin J. Lawrie

Proceedings Volume PC12206, Quantum Nanophotonic Materials, Devices, and Systems 2022; PC1220602 (2022) https://doi.org/10.1117/12.2636895
Event: SPIE Nanoscience + Engineering, 2022, San Diego, California, United States

Abstract

Boron vacancy color centers in hBN have drawn substantial interest over the past year because of the potential for quantum sensing in van der Waals heterostructures. Here, we describe strong localized enhancement and redshifting of boron vacancy luminescence at creases in an hBN flake measured with correlative photoluminescence and cathodoluminescence microscopies. These results are consistent with density functional theory calculations showing boron vacancy migration toward regions with uniaxial compressive strain, and they are essential for the development of new quantum devices that leverage the optically accessible spin state in boron vacancy color centers in hBN.

Conference Presentation

Citation Download Citation

Benjamin J. Lawrie "Nanoscale strain control of spin defects in hBN (Conference Presentation)", Proc. SPIE PC12206, Quantum Nanophotonic Materials, Devices, and Systems 2022, PC1220602 (4 October 2022); https://doi.org/10.1117/12.2636895

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