Presentation
21 March 2023 Optical and structural nano-characterization of GaN-based power devices
Author Affiliations +
Abstract
We will present nano-scale correlation of structural, electronic and optical properties of GaN-based power devices by cathodoluminescence directly performed in a scanning transmission electron microscope. The two-dimensional electron gas (2DEG) of a lateral AlGaN/GaN field-effect transistor has been investigated directly probing the local origin of the 2DEG by its spectral luminescence fingerprint. This characteristic 2DEG luminescence is locally observed nanometers inside the GaN - close to the GaN/AlN/AlGaN interface. Furthermore, a lateral p-n+ superjunction will be presented, where excitonic and donor-acceptor transitions directly visualize the space charge region evidencing the exciton dissociation in the built-in electric field.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jürgen Christen, Gordon Schmidt, Frank Bertram, Arne Debald, Michael Heuken, Thorsten Zweipfennig, Holger Kalisch, and Andrei Vescan "Optical and structural nano-characterization of GaN-based power devices", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2649840
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KEYWORDS
Luminescence

Excitons

Gallium nitride

Scanning transmission electron microscopy

Spectroscopes

Scanning electron microscopy

Semiconductors

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