CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume PC12421 > Article
Presentation
21 March 2023 Properties of III-nitride wide quantum wells and their application to optoelectronic devices
Greg Muziol, Mateusz Hajdel, Marcin Siekacz, Henryk Turski, Tadek Suski, Witold Trzeciakowski, Czeslaw Skierbiszewski
Author Affiliations +
Proceedings Volume PC12421, Gallium Nitride Materials and Devices XVIII; (2023) https://doi.org/10.1117/12.2650094
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
III-nitride semiconductor system is widely used in many electronic and optoelectronic applications. The presence of extremely high piezoelectric field in quantum wells (QWs) is known to cause severe separation of electron and hole wavefunctions and limits the thickness of QWs used in devices. We have recently shown that wide QWs are also a viable solution in optoelectronic devices. In this paper we will discuss the physics of recombination in wide InGaN QWs. We will show that the piezoelectric field is fully screened in case of wide InGaN QW and light emission occurs through excited states with high wavefunction overlap.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Greg Muziol, Mateusz Hajdel, Marcin Siekacz, Henryk Turski, Tadek Suski, Witold Trzeciakowski, and Czeslaw Skierbiszewski "Properties of III-nitride wide quantum wells and their application to optoelectronic devices", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2650094
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 PRESENTATION
WATCH
PRESENTATION SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
KEYWORDS
Quantum wells
Optoelectronic devices
Indium gallium nitride
Physics
Light emitting diodes
Optoelectronics
Photonics
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top