Defect characterization of undoped and doped b-Ga2O3 (Conference Presentation)

Cuong Ton-That; Curtis P. Irvine; Attila Stopic; Karin Yamamura; Mika T. Westerhausen; Matthew R. Phillips

doi:10.1117/12.2667029

16 March 2023 Defect characterization of undoped and doped b-Ga₂O₃ (Conference Presentation)

Cuong Ton-That, Curtis P. Irvine, Attila Stopic, Karin Yamamura, Mika T. Westerhausen, Matthew R. Phillips

Proceedings Volume PC12422, Oxide-based Materials and Devices XIV; PC124220P (2023) https://doi.org/10.1117/12.2667029
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

This presentation will discuss recent studies on the fabrication and characterization of b-Ga2O3 containing Ge donors or N acceptors. A plasma source was used to dope Ga2O3 nanowires with N by exploiting their nanoscale cross sections, while bulk crystals were uniformly doped with Ge by neutron irradiation. The dopant incorporation was confirmed by chemical analyses. We find defect-related luminescence is strongly enhanced in N-doped Ga2O3, which likely originates from defect compensation effects. With Ge doping, both the UV band due to self-trapped holes (STHs) and defect-related emission increase following neutron irradiation, suggesting STHs being localized close to a defect site.

Conference Presentation

Citation Download Citation

Cuong Ton-That, Curtis P. Irvine, Attila Stopic, Karin Yamamura, Mika T. Westerhausen, and Matthew R. Phillips "Defect characterization of undoped and doped b-Ga₂O₃ (Conference Presentation)", Proc. SPIE PC12422, Oxide-based Materials and Devices XIV, PC124220P (16 March 2023); https://doi.org/10.1117/12.2667029

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KEYWORDS

Germanium

Doping

Gallium

Dopants

Nanowires

Plasma

Raman spectroscopy

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