Frontiers in AlN

Zlatko Sitar

doi:10.1117/12.3000731

9 March 2024 Frontiers in AlN

Zlatko Sitar

Proceedings Volume PC12886, Gallium Nitride Materials and Devices XIX; PC128860E (2024) https://doi.org/10.1117/12.3000731
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

AlN is a UWBG material (Eg=6.1 eV) for the realization of UV optoelectronics and high-power, high-frequency electronics. Although most challenges in crystal growth and epitaxy of AlN have been overcome, achieving controlled electrical conductivity of technological interest has proven to be challenging. While controlling the chemical and electrochemical potentials during doping has been crucial for achieving doping and compensation control, the obtained conductivity was still modest. The presumed DX formation has been considered an insurmountable killer defect as it pins the Fermi level and imposes a low limit on the achievable free carrier concentration. We have developed several novel equilibrium and non-equilibrium approaches for doping and point defect management in AlN and shown that donors in AlN do not undergo a DX transition but rather are distributed between a shallow and deep state. We have shown that the shallow state can be kinetically stabilized to obtain highly-conducting n-type AlN with mobilities approaching 400 cm2/Vs. These results have enabled the first demonstration of AlN Schottky diodes capable of >3 kA/cm2 with a critical breakdown field exceeding 10 MV/cm.

Conference Presentation

Citation Download Citation

Zlatko Sitar "Frontiers in AlN", Proc. SPIE PC12886, Gallium Nitride Materials and Devices XIX, PC128860E (9 March 2024); https://doi.org/10.1117/12.3000731

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