In-situ structural controls during the GaN-based VCSEL growths

Tetsuya Takeuchi; Satoshi Kamiyama; Motoaki Iwaya

doi:10.1117/12.3000668

9 March 2024 In-situ structural controls during the GaN-based VCSEL growths

Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya

Proceedings Volume PC12886, Gallium Nitride Materials and Devices XIX; PC128860T (2024) https://doi.org/10.1117/12.3000668
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

GaN-based VCSELs have been developed towards light sources in retinal scanning displays and so on. One of the biggest issues in VCSEL fabrication is to align three wavelengths, (1) a DBR center wavelength, (2) a cavity resonance wavelength, and (3) a gain peak wavelength. Typically, all of them are determined during the epitaxial growth. Therefore, in-situ measurements during the growth could be a key to solve the issue. In order to fabricate AlInN/GaN DBRs as designed, an InN mole fraction in AlInN must be controlled. We have used an in-situ wafer curvature measurement to monitor the InN mole fraction during the DBR growth, leading to a precise determination of the InN mole faction value within ±0.1% range. Next, we developed a control of the cavity resonance wavelength (cavity length). We used an in-situ reflectivity spectra measurement. As a result, a difference between a measured resonance wavelength and the designed wavelength was only 2 nm, corresponding to a 0.5% error. The above two in-situ measurements are powerful tools for in-situ controls of alloy compositions and thicknesses, drastically improving the reproducibility of the VCSEL performances.

Conference Presentation

Citation Download Citation

Tetsuya Takeuchi, Satoshi Kamiyama, and Motoaki Iwaya "In-situ structural controls during the GaN-based VCSEL growths", Proc. SPIE PC12886, Gallium Nitride Materials and Devices XIX, PC128860T (9 March 2024); https://doi.org/10.1117/12.3000668

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