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9 March 2024 Cathodoluminescence lifetime spectroscopy for efficient III-nitride LEDs
Gwénolé Jacopin
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Proceedings Volume PC12886, Gallium Nitride Materials and Devices XIX; PC128861A (2024) https://doi.org/10.1117/12.3000936
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
Due the reduced dimensions of micro-light-emitting diodes (μLEDs), non-radiative sidewall recombinations are becoming increasingly important and therefore it is necessary to quantify the impact of surface recombinations (SR). Here, we probe the influence of SR on the optical properties of InGaN/GaN μLEDs with a spatial resolution of 100 nm and a time resolution of 50 ps using spatially-resolved time-correlated cathodoluminescence spectroscopy. Variations in carrier lifetime near sidewalls enabled us to quantify the surface recombination velocity. By coupling this technique with a diffusion model, we demonstrate that the combination of KOH treatment and Al2O3 passivation drastically improves the efficiency of μLEDs. We then show that this technique is not limited to InGaN µLED and we will provide examples in other area of applications.
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Gwénolé Jacopin "Cathodoluminescence lifetime spectroscopy for efficient III-nitride LEDs", Proc. SPIE PC12886, Gallium Nitride Materials and Devices XIX, PC128861A (9 March 2024); https://doi.org/10.1117/12.3000936
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KEYWORDS
Spectroscopy
Light emitting diodes
Electrons
Spatial resolution
Picosecond phenomena
Quantum photonics
Quantum statistics
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