1 January 2011 Synthesis of indium nanowires by oblique angle deposition
Aniruddha Mondal, Paul Samy Chinnamuthu
Author Affiliations +
Abstract
Indium nanowires were synthesized by the oblique angle deposition technique, using an e-beam evaporator. The shape of the deposited nanowires changes with the vapor flux angle, and the x-ray diffraction spectrum shows scattering from tetragonal phase indium. Deposition rates ranging from 0.5 to 5 A°/s were used for 200 and 500 nm thick deposits. Nanowires formed at the highest deposition rate and were up to 4.5 μm in length. Raman scattering shows enhanced intensity and optical absorption occurs in the infrared region.
© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE) 1934-2608/2011/5(1)/053522/6/$25.00
Aniruddha Mondal and Paul Samy Chinnamuthu "Synthesis of indium nanowires by oblique angle deposition," Journal of Nanophotonics 5(1), 053522 (1 January 2011). https://doi.org/10.1117/1.3630050
Published: 1 January 2011
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Nanowires

Indium

Silicon

Raman scattering

Absorption

Raman spectroscopy

Crystals

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