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1 January 2011 Silicon-on-insulator microring resonator defect-based photodetector with 3.5-GHz bandwidth
Jason J. Ackert, Marco Fiorentino, Dylan F. Logan, Raymond Beausoleil, Paul E. Jessop, Andrew P. Knights
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Journal of Nanophotonics, Vol. 5, Issue 1, 059507 (January 2011). https://doi.org/10.1117/1.3666059
Abstract
We have devised and fabricated high-speed silicon-on-insulator resonant microring photodiodes. The detectors comprise a p-i-n junction across a silicon rib waveguide microring resonator. Light absorption at 1550 nm is enhanced by implanting the diode intrinsic region with boron ions at 350 keV with a dosage of 1 × 1013cm−2. We have measured 3-dB bandwidths of 2.4 and 3.5 GHz at 5 and 15 V reverse bias, respectively, and observed an open-eye diagram at 5 gigabit/s with 5 V bias.
© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE) 1934-2608/2011/5(1)/059507/6/$25.00
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Jason J. Ackert, Marco Fiorentino, Dylan F. Logan, Raymond Beausoleil, Paul E. Jessop, and Andrew P. Knights "Silicon-on-insulator microring resonator defect-based photodetector with 3.5-GHz bandwidth," Journal of Nanophotonics 5(1), 059507 (1 January 2011). https://doi.org/10.1117/1.3666059
Published: 1 January 2011
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Cited by 25 scholarly publications and 1 patent.
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KEYWORDS
Silicon
Microrings
Resonators
Sensors
Photodetectors
Diodes
Waveguides
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