Read-only memory disk with AgOx and AgInSbTe superresolution mask layer

Feng Zhang; Yang Wang; Wendong Xu; Fuxi Gan

doi:10.1117/1.1925567

1 June 2005 Read-only memory disk with AgO_x and AgInSbTe superresolution mask layer

Feng Zhang, Yang Wang, Wendong Xu, Fuxi Gan

Author Affiliations +

Optical Engineering, Vol. 44, Issue 6, 065202 (June 2005). https://doi.org/10.1117/1.1925567

Abstract

Two novel read-only memory (ROM) disks, one with an AgO_x mask layer and the other with an AgInSbTe mask layer, are proposed and studied. The AgO_x and the AgInSbTe films sputtered on the premastered substrates with pit depths of 50 nm and pit lengths (space) of 380 nm are studied by atomic force microscopy. Disk readout measurement is carried out using a dynamic setup with a laser wavelength of 632.8 nm and an object lens numerical aperture (NA) of 0.40. Results show that the superresolution effect happens only at a suitable oxygen flow ratio for the AgO_x ROM disk. The best superresolution readout effect is achieved at an oxygen flow ratio of 0.5 with the smoothest film surface. Compared with the AgO_x ROM disk, the AgInSbTe ROM disk has a much smoother film surface and better superresolution effect. A carrier-to-noise ratio (CNR) of above 40 dB can be obtained at an appropriate readout power and readout velocity. The readout CNR of both the AgO_x and AgInSbTe ROM disks have a nonlinear dependence on the readout power. The superresolution readout mechanisms for these ROM disks are analyzed and compared as well.

©(2005) Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation Download Citation

Feng Zhang, Yang Wang, Wendong Xu, and Fuxi Gan "Read-only memory disk with AgO_x and AgInSbTe superresolution mask layer," Optical Engineering 44(6), 065202 (1 June 2005). https://doi.org/10.1117/1.1925567

Published: 1 June 2005

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