27 June 2012 Ultrafast laser-induced damage and the influence of spectral effects
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Abstract
Numerous studies have investigated the prerequisite role of photoionization in ultrafast laser-induced damage (LID) of bulk dielectrics. This study examines the role of spectral width and instantaneous laser frequency in LID using a frequency dependent multiphoton ionization (MPI) model and numerical simulation of initially 800 nm laser pulses propagating through fused silica. Assuming a band gap of 9 eV, MPI by an 800 nm field is a six-photon process, but when the instantaneous wavelength is greater than 827 nm an additional photon is required for photoionization, reducing the probability of the event by many orders of magnitude. Simulation results suggest that this frequency dependence can significantly impact the onset of LID and ultrashort pulse filamentation in solids.
© 2012 Society of Photo-Optical Instrumentation Engineers (SPIE) 0091-3286/2012/$25.00 © 2012 SPIE
Jeremy R. Gulley "Ultrafast laser-induced damage and the influence of spectral effects," Optical Engineering 51(12), 121805 (27 June 2012). https://doi.org/10.1117/1.OE.51.12.121805
Published: 27 June 2012
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CITATIONS
Cited by 12 scholarly publications.
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KEYWORDS
Laser induced damage

Ultrafast phenomena

Silica

Plasma

Pulsed laser operation

Ionization

Plasma generation

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