High reflectivity design of the one-dimensional heterostructure photonic crystal in 3 to 5 and 8 to 12  μm infrared regions

Kangwen Li; Xiangcheng Li; Pingan Chen; Boquan Zhu

doi:10.1117/1.OE.58.1.015108

24 January 2019 High reflectivity design of the one-dimensional heterostructure photonic crystal in 3 to 5 and 8 to 12 μm infrared regions

Kangwen Li, Xiangcheng Li, Pingan Chen, Boquan Zhu

Author Affiliations +

Optical Engineering, Vol. 58, Issue 1, 015108 (January 2019). https://doi.org/10.1117/1.OE.58.1.015108

Abstract

The high reflectivity design of the one-dimensional (1-D) heterostructure photonic crystal is investigated in infrared regions 3 to 5 and 8 to 12 μm. First, the reflection characteristics of the light waves in the 1-D periodic photonic crystal are systematically analyzed. Calculations using the transfer matrix method and simulations verify that the λ / 4 dielectric film is the optimum option for achieving the ideal optical reflectivity in a certain wavelength range. The merging of the even-layered high-reflective photonic crystals can be used to expand the gap of the infrared band. In contrast, a combination of the odd-numbered composite photonic crystals can be used to achieve a high transmittance at a wavelength of 10.6 μm with a larger gap in the infrared region. Accordingly, an enhanced photonic crystal is designed using silver metal at the interface and even-numbered dielectric films of Ge and ZnS with 23 layers of the 1-D metal. The simulated reflectivity of this photonic crystal ranges from 95% to 99.9% in wavelength ranges 3 to 5 and 8 to 14 μm. This design significantly reduces the number of layers required for forming a 1-D high-reflective photonic crystal in the infrared bands 3 to 5 and 8 to 12 μm.

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Kangwen Li, Xiangcheng Li, Pingan Chen, and Boquan Zhu "High reflectivity design of the one-dimensional heterostructure photonic crystal in 3 to 5 and 8 to 12 μm infrared regions," Optical Engineering 58(1), 015108 (24 January 2019). https://doi.org/10.1117/1.OE.58.1.015108

Received: 24 August 2018; Accepted: 3 January 2019; Published: 24 January 2019

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