Dr. Nihan Kosku Perkgöz Profile

Dr. Nihan Kosku Perkgöz

at Eskisehir Technical Univ

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Proceedings Article | 5 March 2021 Presentation + Paper

Controlled ALD doping of Er3+ for active on-chip waveguide amplifiers based on Al2O3

Mustafa Demirtaş, Nihan Kosku Perkgöz, Feridun Ay

Proceedings Volume 11689, 116890S (2021) https://doi.org/10.1117/12.2586874

KEYWORDS: Waveguides, Optical amplifiers, Doping, Atomic layer deposition, Ions, Plasma, Spectroscopic ellipsometry, Single mode fibers, Silicon, Planar waveguides

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In this work, we report on the development of ALD-grown ultralow loss host Al₂O₃ planar waveguides on Si and then successful realization of ALD-grown Er³⁺ doped on-chip Al₂O₃ waveguide-based high-gain amplifier devices. Both thermal and plasma enhanced ALD processes have been employed in the optimization processes. Optimization of both Al₂O₃ and Er₂O₃ growth conditions is performed for fine-tuning the optical properties of respective films. Systematic characterization of both films has been carried out by making use of spectroscopic ellipsometry, XRD, FTIR, and XPS techniques. The Er₂O₃ layers are sandwiched between the Al₂O₃ layers to achieve controlled erbium ion doping with the homogenous distribution. The effects of the growth parameters of Al₂O₃ and Er₂O₃ including deposition temperature, RF plasma power, TMA pulse time, Er(thd)3 pulse time, and O₂ pulse time are optimized. With this work, we propose a method for precise control of doping ion concentration and its distribution. As a demonstrator, single-mode ridge waveguide amplifiers are realized by lithography from the active planar structures. ALD deposited chip-scale singlemode Er³⁺ doped Al₂O₃ ridge waveguide amplifiers with a small-signal gain of more than 13 dB/cm over the C band are realized. The reported ALD based growth process can further be adapted for active ion doping of different oxide systems with precise concentration and profile control, thus offering new opportunities for active on-chip applications.

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