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21 March 2023 Towards ultrahigh-resolution micro-LED displays using a monolithic vertically stacked full-color LED
Yasufumi Fujiwara, Shuhei Ichikawa, Dolf Timmerman, Jun Tatebayashi
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Proceedings Volume PC12421, Gallium Nitride Materials and Devices XVIII; (2023) https://doi.org/10.1117/12.2648808
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
High-density micro-light-emitting diode (μ-LED) arrays are the key to next-generation ultrahigh-resolution displays. We have demonstrated a full-color LED consisting of Eu-doped GaN and InGaN quantum wells (QWs). The full-color LED exhibited a remarkably wide color gamut and its maximum luminance reached over 3000 cd/m2. However, due to the quantum-confined Stark effects, the wavelength of a green LED shifted to a shorter wavelength as the injected current increased, which resulted in a reduced color gamut. There are two strategies in this regard; the use of a semi-polar substrate with reduced internal electric field and Tb-doped III-nitrides as a green emitter.
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Yasufumi Fujiwara, Shuhei Ichikawa, Dolf Timmerman, and Jun Tatebayashi "Towards ultrahigh-resolution micro-LED displays using a monolithic vertically stacked full-color LED", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2648808
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KEYWORDS
Light emitting diodes
LED displays
Europium
Quantum wells
Terbium
Distributed Bragg reflectors
Gallium nitride
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