1.3-μm InAs QD lasers for integrated photonics

Lydia Jarvis; Ben Maglio; Sara Gillgrass; Craig Allford; Fwoziah Albeladi; Abigail Enderson; Sam Shutts; Huiwen Deng; Mingchu Tang; Huiyun Liu; Peter M. Smowton

doi:10.1117/12.2656077

17 March 2023 1.3-μm InAs QD lasers for integrated photonics

Lydia Jarvis, Ben Maglio, Sara Gillgrass, Craig Allford, Fwoziah Albeladi, Abigail Enderson, Sam Shutts, Huiwen Deng, Mingchu Tang, Huiyun Liu, Peter M. Smowton

Author Affiliations +

Proceedings Volume PC12440, Novel In-Plane Semiconductor Lasers XXII; PC1244001 (2023) https://doi.org/10.1117/12.2656077
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

We introduce direct n-doping of quantum dots together with modulation p-doping as a technique to reduce both the threshold current density and the temperature dependence of threshold current density in 1.3um emitting quantum dot lasers. Threshold current density in 1mm long QD lasers with cleaved and uncoated facets is effectively halved at both 27°C and at 97°C when using co-doping as compared to the undoped case. Results indicate that modulation p-doping can improve the threshold current temperature dependence and direct n-doping reduces the magnitude of threshold current density and that the benefits of each is maintained when used together.

Conference Presentation

Citation Download Citation

Lydia Jarvis, Ben Maglio, Sara Gillgrass, Craig Allford, Fwoziah Albeladi, Abigail Enderson, Sam Shutts, Huiwen Deng, Mingchu Tang, Huiyun Liu, and Peter M. Smowton "1.3-μm InAs QD lasers for integrated photonics", Proc. SPIE PC12440, Novel In-Plane Semiconductor Lasers XXII, PC1244001 (17 March 2023); https://doi.org/10.1117/12.2656077

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