Mr. Huiwen Deng Profile

Huiwen Deng

at Univ College London

SPIE Involvement:

Author

Publications (4)

Proceedings Article | 13 March 2024 Presentation

Low-loss III-IV photonics and high efficiency grating couplers incorporating low-index AlOx layers

Fwoziah Albeladi, Sara-Jayne Gillgrass, Josie Nabialek, Chris Hodges, Mingchu Tang, Huiwen Deng, Huiyun Liu, Samuel Shutts, Peter Smowton

Proceedings Volume PC12889, PC128890K (2024) https://doi.org/10.1117/12.3002203

KEYWORDS: Optical gratings, Photonics, Waveguides, Semiconductor lasers, Oxidation, Optics manufacturing, Wave propagation, Silicon photonics, Photonic integrated circuits, Optical design

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Proceedings Article | 17 March 2023 Presentation

1.3-μm InAs QD lasers for integrated photonics

Lydia Jarvis, Ben Maglio, Sara Gillgrass, Craig Allford, Fwoziah Albeladi, Abigail Enderson, Sam Shutts, Huiwen Deng, Mingchu Tang, Huiyun Liu, Peter Smowton

Proceedings Volume PC12440, PC1244001 (2023) https://doi.org/10.1117/12.2656077

KEYWORDS: Integrated photonics, Indium arsenide, Quantum dots, Quantum dot lasers, Modulation, Laser damage threshold, Tolerancing, Silicon, Semiconductor lasers

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Proceedings Article | 9 March 2022 Presentation

Active region doping strategies in O-band InAs/GaAs quantum-dot lasers

Lydia Jarvis, Ben Maglio, Samuel Shutts, Zhibo Li, Huiwen Deng, Mingchu Tang, Huiyun Liu, Peter Smowton

Proceedings Volume PC12021, PC1202104 (2022) https://doi.org/10.1117/12.2614632

KEYWORDS: Doping, Quantum dot lasers, Indium arsenide, Gallium arsenide, Modulation, Temperature metrology, Photonics, Molecular beam epitaxy, Luminescence, Lithium

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Proceedings Article | 6 October 2021 Presentation

Inversion boundary annihilation in GaAs grown on On‐Axis Silicon (001) via Molecular Beam Epitaxy

Xuezhe Yu, Keshuang Li, Junjie Yang, Ying Lu, Zizhuo Liu, Mingchu Tang, Pamela Jurczak, Jae-Seong Park, Huiwen Deng, Hui Jia, Manyu Dang, Ana Sanchez, Richard Beanland, Wei Li, Xiaodong Han, Jinchuan Zhang, Huan Wang, Fengqi Liu, Siming Chen, Alwyn Seeds, Peter Smowton, Huiyun Liu

Proceedings Volume 11880, 118800H (2021) https://doi.org/10.1117/12.2601451

KEYWORDS: Silicon, Gallium arsenide, Molecular beam epitaxy, Photonic integrated circuits, Interfaces, Indium arsenide, Epitaxy, CMOS technology, Annealing

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