POLY(2,2,2-Trifluoroethyl A-Chloroacrylate) PTFECA, A High Sensitivity Ion Resist

John E. Jensen; Charles W. Slayman

doi:10.1117/12.942321

18 June 1984 POLY(2,2,2-Trifluoroethyl A-Chloroacrylate) PTFECA, A High Sensitivity Ion Resist

John E. Jensen, Charles W. Slayman

Proceedings Volume 0471, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III; (1984) https://doi.org/10.1117/12.942321
Event: 1984 Microlithography Conferences, 1984, Santa Clara, United States

Abstract

For masked ion beam lithography (MIBL) beam-induced mask heating can cause deformations and image distortion. This can be avoided by the use of a resist ten times more sensitive than PMMA. Poly(2,2,2-trifluoroethyl -chloroacrylate), PTFECA, has been shown to be about ten times more sensitive than PMMA for proton beam exposures at 100 keV, and has demonstrated sub-half-micron resolution. The etch characteristics of PTFECA, however, are not as good as PMMA.

Citation Download Citation

John E. Jensen and Charles W. Slayman "POLY(2,2,2-Trifluoroethyl A-Chloroacrylate) PTFECA, A High Sensitivity Ion Resist", Proc. SPIE 0471, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III, (18 June 1984); https://doi.org/10.1117/12.942321

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available