Picosecond Transient Reflectivity Of Photowashed Gallium Arsenide Surfaces

J. E. Wessel; S. M. Beck; D. C. Marvin

doi:10.1117/12.940920

22 April 1987 Picosecond Transient Reflectivity Of Photowashed Gallium Arsenide Surfaces

J. E. Wessel, S. M. Beck, D. C. Marvin

Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940920
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

Picosecond transient reflectivity was applied to measure surface recombination processes in intrinsic and n-doped GaAs. Photowashed surfaces were characterized by slow recombination and the results imply flat band conditions were achieved. Unwashed samples are characterized by rapid, complex surface charge carrier kinetics.

Citation Download Citation

J. E. Wessel, S. M. Beck, and D. C. Marvin "Picosecond Transient Reflectivity Of Photowashed Gallium Arsenide Surfaces", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.940920

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