Presentation
20 April 2017 Advances in semipolar InGaN laser diodes (Conference Presentation)
Mel McLaurin, James Raring, Christiane Poblenz, Paul Rudy, Georg Aigeldinger, Eric Goutain, Hua Huang
Author Affiliations +
Proceedings Volume 10123, Novel In-Plane Semiconductor Lasers XVI; 1012307 (2017) https://doi.org/10.1117/12.2251721
Event: SPIE OPTO, 2017, San Francisco, California, United States
Abstract
We present state-of-the-art performance from laser based light sources based on semipolar GaN. Recent advances toward the commercialization of blue, InGaN semipolar laser diodes are described. Additionally, we introduce next generation white light sources based on laser-pumped phosphor architectures.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mel McLaurin, James Raring, Christiane Poblenz, Paul Rudy, Georg Aigeldinger, Eric Goutain, and Hua Huang "Advances in semipolar InGaN laser diodes (Conference Presentation)", Proc. SPIE 10123, Novel In-Plane Semiconductor Lasers XVI, 1012307 (20 April 2017); https://doi.org/10.1117/12.2251721
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KEYWORDS
Semiconductor lasers

Indium gallium nitride

Light sources

Gallium nitride

Current controlled current source

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