Modeling of tunnel field effect transistor: the impact of construction parameters

Piotr Wiśniewski; Bogdan Majkusiak

doi:10.1117/12.2261752

22 December 2016 Modeling of tunnel field effect transistor: the impact of construction parameters

Piotr Wiśniewski, Bogdan Majkusiak

Proceedings Volume 10175, Electron Technology Conference 2016; 101750J (2016) https://doi.org/10.1117/12.2261752
Event: Electron Technology Conference ELTE 2016, 2016, Wisla, Poland

Abstract

The aim of the work is to present a theoretical model of tunnel field effect transistor and to investigate the influence of the TFET’s construction parameters on the current-voltage characteristics. The solution to the problem of electrostatics in the structure is based on the numerical solution of two-dimensional Poisson equation and the electron and hole continuity equations. The tunneling process has been taken into account by a non-local interband generation model. Output and transfer characteristics of the double gate TFET were generated.

Citation Download Citation

Piotr Wiśniewski and Bogdan Majkusiak "Modeling of tunnel field effect transistor: the impact of construction parameters", Proc. SPIE 10175, Electron Technology Conference 2016, 101750J (22 December 2016); https://doi.org/10.1117/12.2261752

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