Low-damage plasma etching of porous low-k films in CF3Br and CF4 plasmas under low-temperature conditions

A. Miakonkikh; I. Clemente; A. Vishnevskiy; K. Rudenko; M. Baklanov

doi:10.1117/12.2267113

30 December 2016 Low-damage plasma etching of porous low-k films in CF₃Br and CF₄ plasmas under low-temperature conditions

A. Miakonkikh, I. Clemente, A. Vishnevskiy, K. Rudenko, M. Baklanov

Author Affiliations +

Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 1022420 (2016) https://doi.org/10.1117/12.2267113
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation

Abstract

Low temperature etching of organosilicate low-k dielectrics in CF₃Br and CF₄ plasmas is studied. Chemical composition if pristine film and etched were measured by FTIR. Decrease in plasma-induced damage under low-temperature conditions is observed. It is shown that the plasma damage reduction is related to accumulation of reaction products. The reaction products could be removed by thermal bake. In the case of CF₄ plasma, the thickness of CF_x polymer increases with the temperature reduction. This polymer layer leads to strong decrease of diffusion rate of fluorine atoms and as a consequence to reduction of plasma-induced damage (PID). Bromine containing reaction products are less efficient for low-k surface protection against the plasma damage.

Citation Download Citation

A. Miakonkikh, I. Clemente, A. Vishnevskiy, K. Rudenko, and M. Baklanov "Low-damage plasma etching of porous low-k films in CF₃Br and CF₄ plasmas under low-temperature conditions", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 1022420 (30 December 2016); https://doi.org/10.1117/12.2267113

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