Structural And Compositional Characterization Of Semiconductor Multilayers By Modulation Spectroscopies.

Chris Van Hoof; Douglas J. Arent; Jo De Boeck; Kristin Deneffe; Gustaaf Borghs

doi:10.1117/12.950203

5 April 1989 Structural And Compositional Characterization Of Semiconductor Multilayers By Modulation Spectroscopies.

Chris Van Hoof, Douglas J. Arent, Jo De Boeck, Kristin Deneffe, Gustaaf Borghs

Proceedings Volume 1025, Semiconductor Lasers; (1989) https://doi.org/10.1117/12.950203
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany

Abstract

Materials characterization of semiconductor structures suited for nonlinear optical applications has been performed by absorption and photomodulated absorption spectroscopy. With respect to non-modulated absorption spectroscopy, a strong increase in room temperature resolution is observed. We present here the first photomodulated absorption studies performed on Al_xGa_1-xAs/GaAs and In_xGa_1-xAs/GaAs superlattices and AlAs/GaAs tunnel diodes, revealing excellent resolution of excitonic transitions. The temperature dependence of the spectral lineshapes arising from bulk InGaAs and AlGaAs samples is studied in the temperature range from 100K to 300K, and is compared to lineshapes arising from excitonic transitions in superlattices. Application of this technique to In_xGa_1-xAs/GaAs structures grown on GaAs substrates, which due to their favorable band structure do not require sample thinning, is most attractive.

Citation Download Citation

Chris Van Hoof, Douglas J. Arent, Jo De Boeck, Kristin Deneffe, and Gustaaf Borghs "Structural And Compositional Characterization Of Semiconductor Multilayers By Modulation Spectroscopies.", Proc. SPIE 1025, Semiconductor Lasers, (5 April 1989); https://doi.org/10.1117/12.950203

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