Deposition Of Single Crystalline Silicon Films Using Excimer Laser

Masataka Murahara; Koichi Toyoda

doi:10.1117/12.950584

20 June 1989 Deposition Of Single Crystalline Silicon Films Using Excimer Laser

Masataka Murahara, Koichi Toyoda

Proceedings Volume 1031, 7th Intl Symp on Gas Flow and Chemical Lasers; (1989) https://doi.org/10.1117/12.950584
Event: 7th International Symposium on Gas Flow and Chemical Lasers, 1988, Vienna, Austria

Abstract

Photolytic processing is especially attractive for semiconductor device fabrications at low temperature. Specially excimer laser chemical vapor deposition are expected as.new method for selective deposition of the semiconductor films. We report here the formation of single crystalline silicon films were grown on the polycrystalline silicon substrate at 450°C substrate temperature using an ArF excimer laser. Laser beams were irradiated simultaneously parallel and perpendicular to the substrate. The focused parallel beam induced two photon decomposition of SiH4 near the surface of a substrate to produce radicals. Amorphous silicon films were deposited by parallel irradiation only, and poly or single crystalline silicon films were grown with the additional perpendicular irradiation. Crystallinity was confirmed by measurements of refraction index, optical band gap, infrared absorption, electron diffraction and X-ray diffraction.

Citation Download Citation

Masataka Murahara and Koichi Toyoda "Deposition Of Single Crystalline Silicon Films Using Excimer Laser", Proc. SPIE 1031, 7th Intl Symp on Gas Flow and Chemical Lasers, (20 June 1989); https://doi.org/10.1117/12.950584

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