Bipolar Transistor Fabrication Using Gas Immersion Laser Doping

Kurt H. Weiner; Thomas W. Sigmon

doi:10.1117/12.951251

1 June 1989 Bipolar Transistor Fabrication Using Gas Immersion Laser Doping

Kurt H. Weiner, Thomas W. Sigmon

Proceedings Volume 1041, Metal Vapor Laser Technology and Applications; (1989) https://doi.org/10.1117/12.951251
Event: OE/LASE '89, 1989, Los Angeles, CA, United States

Abstract

Gas. Immersion Laser Doping (GILD) is presented as a powerful process to fabricate emitter and base regions in narrow-base bipolar transistors. Characterization of maximum melt depth versus silicon surface melt time is performed. Results of this characterization demonstrate that surface melt time provides an accurate in-situ measurement of junction depth. The GILD process is then used to fabricate the emitter and active-base regions in simple bipolar transistors. Base widths ranging from 700Å to 1200Å are achieved. The transistors exhibit good electrical behavior with maximum forward current gains greater than 50.

Citation Download Citation

Kurt H. Weiner and Thomas W. Sigmon "Bipolar Transistor Fabrication Using Gas Immersion Laser Doping", Proc. SPIE 1041, Metal Vapor Laser Technology and Applications, (1 June 1989); https://doi.org/10.1117/12.951251

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available