Study on the dark-field illumination for near-field microscope using anamorphic optics to inspect defects on semiconductor wafers

Woojun Han; Sunseok Yang; Hangyeong Oh; Yoongi Lee; Jaisoon Kim

doi:10.1117/12.2297506

13 March 2018 Study on the dark-field illumination for near-field microscope using anamorphic optics to inspect defects on semiconductor wafers

Woojun Han, Sunseok Yang, Hangyeong Oh, Yoongi Lee, Jaisoon Kim

Author Affiliations +

Proceedings Volume 10585, Metrology, Inspection, and Process Control for Microlithography XXXII; 1058520 (2018) https://doi.org/10.1117/12.2297506
Event: SPIE Advanced Lithography, 2018, San Jose, California, United States

Abstract

General approaches to realize higher sensitivity in optical inspection system are using shorter wavelength including UV and higher NA for objective lens. Extreme performances of imaging and illumination systems in a situation of wellmatched to each other are inevitable for the further effort on an effective optical detection of fine defects in patterned wafer. This study focused on the dark-field illumination method in near-field condition with simple modification of far-field imaging and illumination system which is designed by anamorphic optics and the potential of it is derived from experimental methods.

Citation Download Citation

Woojun Han, Sunseok Yang, Hangyeong Oh, Yoongi Lee, and Jaisoon Kim "Study on the dark-field illumination for near-field microscope using anamorphic optics to inspect defects on semiconductor wafers", Proc. SPIE 10585, Metrology, Inspection, and Process Control for Microlithography XXXII, 1058520 (13 March 2018); https://doi.org/10.1117/12.2297506

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