Terahertz emission from InGaAs with increased indium content

A. E. Yachmenev; R. A. Khabibullin; I. E. Ilyakov; I. A. Glinskiy; A. S. Kucheryavenko; B. V. Shishkin; R. A. Akhmedzhanov; K. I. Zaytsev; D. S. Ponomarev

doi:10.1117/12.2322536

5 October 2018 Terahertz emission from InGaAs with increased indium content

A. E. Yachmenev, R. A. Khabibullin, I. E. Ilyakov, I. A. Glinskiy, A. S. Kucheryavenko, B. V. Shishkin, R. A. Akhmedzhanov, K. I. Zaytsev, D. S. Ponomarev

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Proceedings Volume 10800, Millimetre Wave and Terahertz Sensors and Technology XI; 108000D (2018) https://doi.org/10.1117/12.2322536
Event: SPIE Security + Defence, 2018, Berlin, Germany

Abstract

We have investigated the influence of indium content (x) increase on spectral characteristics of In_xGa_1-xAs photoconductor. To avoid the mismatch between crystalline parameters of In_xGa_1-xAs and GaAs wafer we proposed to incorporate a step-graded metamorphic buffer layer. We showed that x increase strongly enhances THz emission and broadens THz spectrum of In_xGa_1-xAs. Since no polarity rehearsal of the THz waveform occurs and electron diffusion mobility increases up to 90% with x increase we attribute the increase of THz intensity to photo-Dember effect contribution. The maximum efficiency of optical-to-THz conversion was obtained for In_0.72Ga_0.28 As at optical fluence ~0.01 μJ=cm². The fabricated photoconductors can be used as promising photo-Dember or lateral photo-Dember THz emitters in pulsed THz spectroscopy and imaging, in particular, operating with long wave optical pump.

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A. E. Yachmenev, R. A. Khabibullin, I. E. Ilyakov, I. A. Glinskiy, A. S. Kucheryavenko, B. V. Shishkin, R. A. Akhmedzhanov, K. I. Zaytsev, and D. S. Ponomarev "Terahertz emission from InGaAs with increased indium content", Proc. SPIE 10800, Millimetre Wave and Terahertz Sensors and Technology XI, 108000D (5 October 2018); https://doi.org/10.1117/12.2322536

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