Critical comparison of GaAs and InGaAs THz photoconductors

M. Martin; E. R. Brown

doi:10.1117/12.914028

23 February 2012 Critical comparison of GaAs and InGaAs THz photoconductors

M. Martin, E. R. Brown

Proceedings Volume 8261, Terahertz Technology and Applications V; 826102 (2012) https://doi.org/10.1117/12.914028
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

Ultrafast photoconductors have been an enabling device technology in the THz field during the past decade. And their implementation is now worldwide in time- and frequency-domains systems of various types. While the technological push is towards InGaAs or similar photoconductors operating at 1550 nm, the GaAs-based devices operating around 800 nm still provide superior performance and robustness in most cases. This paper contrasts the GaAs and 1550-nm devices in terms of materials design and solid-state metrics such as electron-hole lifetime, carrier mobility, and resistivity. It also summarizes the main materials developed over the past 20 years.

Citation Download Citation

M. Martin and E. R. Brown "Critical comparison of GaAs and InGaAs THz photoconductors", Proc. SPIE 8261, Terahertz Technology and Applications V, 826102 (23 February 2012); https://doi.org/10.1117/12.914028

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