Development of full-size EUV pellicle with thermal emission layer coating

Juhee Hong; Chulkyun Park; Changhun Lee; Keesoo Nam; Yongju Jang; Seongju Wi; Jinho Ahn

doi:10.1117/12.2501772

3 October 2018 Development of full-size EUV pellicle with thermal emission layer coating

Juhee Hong, Chulkyun Park, Changhun Lee, Keesoo Nam, Yongju Jang, Seongju Wi, Jinho Ahn

Author Affiliations +

Proceedings Volume 10809, International Conference on Extreme Ultraviolet Lithography 2018; 108090R (2018) https://doi.org/10.1117/12.2501772
Event: SPIE Photomask Technology + Extreme Ultraviolet Lithography, 2018, Monterey, California, United States

Abstract

Extreme ultraviolet lithography (EUVL) has received a considerable attention in the semiconductor industry as a promising candidate to achieve the high resolution pattern beyond 10nm. To achieve it, pellicle is essential to prevent the reticle from particle contamination during EUV scanning process. In this study, we present the full-size pellicle for EUVL. Full-size EUV pellicles with SiNx or single-crystalline Si core films were successfully fabricated, and the highest EUV transmittances obtained were 83% and 91%, respectively. Various capping layers were deposited on top of the Si or SiNx core films, and these pellicles were exposed to 355nm UV laser in order to emulate the EUV exposure. Especially, after EUV exposure, Ru emission layer exhibited cooling effect (ΔT) of 600-800 °C with 3nm on SiNx membrane The highest transmittances of full size pellicles with Ru emission layer on SiNx and Si core films obtained were 81% and 88%, respectively.

Conference Presentation

Citation Download Citation

Juhee Hong, Chulkyun Park, Changhun Lee, Keesoo Nam, Yongju Jang, Seongju Wi, and Jinho Ahn "Development of full-size EUV pellicle with thermal emission layer coating", Proc. SPIE 10809, International Conference on Extreme Ultraviolet Lithography 2018, 108090R (3 October 2018); https://doi.org/10.1117/12.2501772

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