Paper
5 November 2018 Design of three-dimensional tapered SOI-based spot-size converter for C band
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Abstract
A three-dimensional tapered silicon-based spot-size converter is studied to improve the butt-jointed efficiency between the laser diode and the single-mode silicon waveguide. This kind of the spot-size converter can be fabricated while the ridge waveguide is etched. There is no need to regrow SiN or SiON on silicon. The optimized coupling efficiency between the spot-size converter and laser diode is over 0.8 at the wavelength of 1550 nm. This spot-size converter is useful for silicon photonics.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fengxin Dong, Anjin Liu, Pijie Ma, Mingjin Wang, Ranzhe Meng, Aiyi Qi, and Wanhua Zheng "Design of three-dimensional tapered SOI-based spot-size converter for C band", Proc. SPIE 10814, Optoelectronic Devices and Integration VII, 108140K (5 November 2018); https://doi.org/10.1117/12.2500973
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KEYWORDS
Waveguides

Semiconductor lasers

Silicon photonics

Photonic integrated circuits

Optical interconnects

Optoelectronics

Semiconductors

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