Paper
19 July 1989 Application of submicron Linewidth Measuring Technique To Photomasks
Nelda D. Clelland, Geoff S. Glaspie
Author Affiliations +
Abstract
This paper describes how a technique was developed to make precise and accurate submicron linewidth measurements on photomasks which takes advantage of the inherent benefits of both optical and electrical measurement techniques. We present the theory of operation for both the optical and electrical equipment used, and the theory behind the electrical test structure design. Test mask development includes the materials (types of chrome and glass), processing, and test structure design. The optical and electrical test procedures are discussed, with emphasis placed on set-up and sample preparation. Test results are summarized and conclusions are drawn based on data analysis. Finally, we show how this integrated technique of submicron measurement of photomasks is applied in a production environment.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nelda D. Clelland and Geoff S. Glaspie "Application of submicron Linewidth Measuring Technique To Photomasks", Proc. SPIE 1087, Integrated Circuit Metrology, Inspection, and Process Control III, (19 July 1989); https://doi.org/10.1117/12.953084
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KEYWORDS
Photomasks

Semiconducting wafers

Calibration

Resistance

Optical testing

Integrated circuits

Inspection

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